Optical Grade Lithium Niobate Crystals And Substrates
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- Commodity name: Optical Grade Lithium Niobate Crystals And Substrates
1. Brief Introduction:
1.1 Advantages Over Other Optical Crystals:
- Large electro-optic and nonlinear optical coefficients
- Wide light transmission window (321nm-5000nm)
- Large birefringence (Δ(no-ne) = 0.086@632.8nm)
- Capable of growing Kg-scale bulk crystals
- Good machinability, non-hygroscopic
1.2 Applications:
- Integrated Waveguide Photonics
- Wave Guide Lasers
- Polarizer for Optic Isolator
- Electro-optic Waveguide Phase Modulators
- Electro-optic Waveguide Amplitude Modulators
- Quasi-phase Matching for SHG and OPO
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2. Basic Properties of LiNbO3 (LN): LN's Basic Parameters:
Negative axis crystal
no > ne
Density:
4.648g/cm3(CLN @25℃)
4.635g/cm3(SLN @25℃)
Mohs hardness
5~5.5
Melting point
1530K
Group
3m
Lattice constant
a=5.1489Ǻ, c=13.8631Ǻ(CLN)
a=5.1483Ǻ, c=13.8573Ǻ(SLN)
Curie temperature Tc
1142 ℃(CLN)
1205 ℃(SLN)
Specific heat capacity
Cp =619J ·kg-1 ·k-1 @25 ℃
Thermal conductivity(W · m-1 · k-1@27 ℃ ):
4.4 ║c ,4.5 ┴c
Free linear electro-optic coefficient(pm ·V-1 @632.8um)
γT13=9.7, γT33=31.9 (CLN)
γT13=10.4, γT33=38.3 (SLN)
Second-order nonlinear electro-optic coefficient
(pm ·V-1 @1.064um) d31=-4.35, d33=-27.2 (CLN)
(pm ·V-1 @1.058um) d31=-4.64, d33=-41.7 (SLN)
3. Product Types
3.1 Based on application areas, Unicrystal offers customers the following product types:
- Isolator Grade: Utilizes a medium growth rate, high crystallinity, and multiple crucible scrap additions for remelting (≥4 times), resulting in a lower price.
- Optical Waveguide Grade: Employs a low growth rate, lower crystallinity, and crucible scrap additions for remelting ≤ 4 times, resulting in a higher price.
3.2 Based on application areas, Unicrystal offers customers two product levels:
- CLN, SLN, MgO: CLN, CLT, and other doped lithium niobate crystals and wafers.
3.3 Based on cutting direction, Unicrystal offers customers ingots or wafers with different cutting orientations:
- X-cut
- Y-cut
- Z-cut
- Others
We employ a reasonable temperature field design and innovative growth process to directly grow ingots of various axial directions, unlike some competitors who use 4-inch Z-cut ingots to laterally drill out X or Y-cut ingots. The latter method produces wafers with vertically grown layers, which may have some impact on applications.
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Tangential
X-cut±0.20
Y-cut±0.20
Z-cut±0.20
Diameter
76.2mm±0.3mm
100mm±0.3mm
150mm±0.3mm
200mm±0.3mm
Positioning edge(OF)
22mm±2mm
22mm±2mm
22mm±2mm
perpendicular to Z±0.2°
perpendicular to Z±0.2°
perpendicular toX±0.2°
Reference edge(RF)
10mm±3mm
10mm±3mm
10mm±3mm
CCW450 from OF
CW1800 and 2700 from OF
CW2700 from OF
Thickness
≥300um±10um (more strict requirements based on customer)
Surface quality
Double sides polished,or single face polished, S/D20/10 (more strict requirements based on customer)
TV4
≤10um (less requirement based on customer)
Flatness
≤10λ 80%Clear Aperture (less flatness requirement based on customer)
Surface refractive index
No=2.2878±0.0001
Ne=2.2028±0.0001
prism coupler method @632.8nm
Edge
Rounded by beveling
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